dc.contributor.author |
Mohamed Elmahdi Shaglouf |
|
dc.contributor.author |
Ahmed Mohamed Abugalia |
|
dc.date.accessioned |
2024-12-01T18:10:43Z |
|
dc.date.available |
2024-12-01T18:10:43Z |
|
dc.date.issued |
2018-01-01 |
|
dc.identifier.issn |
2518-5454 |
|
dc.identifier.uri |
http://dspace-su.server.ly:8080/xmlui/handle/123456789/1867 |
|
dc.description.abstract |
The silicon sensor is more than 25 years old, though the term ‘silicon sensors’ had not yet been coined when the first devises were conceived. The very first silicon sensors used silicon diodes for the detection of light. These photodiodes were normal diodes which had the lacquer on their transparent packages scratched off. Around the same time it became known that temperature could be measured by analyzing the temperature sensitivity of the forward current of a simple diode. This paper establishes the Finite Element Method (FEM) model of a practical silicon beam resonator attached to a diaphragm used for measuring pressure. In this paper presents two location error models. Analyze, calculate, and investigate the relationship between the basic natural frequency of the beam resonator and the measured pressure for two error models are discussed. |
en_US |
dc.language.iso |
other |
en_US |
dc.publisher |
جامعة سرت - Sirte University |
en_US |
dc.relation.ispartofseries |
المجلد الثامن - العدد الاول - يونيو 2018;113-120 |
|
dc.subject |
Finite Element Method |
en_US |
dc.subject |
Beam Resonant |
en_US |
dc.subject |
Pressure |
en_US |
dc.title |
Finite Element Modeling and Simulation of A Microstructure Silicon Beam Resonant |
en_US |
dc.type |
Article |
en_US |