DSpace Repository

Finite Element Modeling and Simulation of A Microstructure Silicon Beam Resonant

Show simple item record

dc.contributor.author Mohamed Elmahdi Shaglouf
dc.contributor.author Ahmed Mohamed Abugalia
dc.date.accessioned 2024-12-01T18:10:43Z
dc.date.available 2024-12-01T18:10:43Z
dc.date.issued 2018-01-01
dc.identifier.issn 2518-5454
dc.identifier.uri http://dspace-su.server.ly:8080/xmlui/handle/123456789/1867
dc.description.abstract The silicon sensor is more than 25 years old, though the term ‘silicon sensors’ had not yet been coined when the first devises were conceived. The very first silicon sensors used silicon diodes for the detection of light. These photodiodes were normal diodes which had the lacquer on their transparent packages scratched off. Around the same time it became known that temperature could be measured by analyzing the temperature sensitivity of the forward current of a simple diode. This paper establishes the Finite Element Method (FEM) model of a practical silicon beam resonator attached to a diaphragm used for measuring pressure. In this paper presents two location error models. Analyze, calculate, and investigate the relationship between the basic natural frequency of the beam resonator and the measured pressure for two error models are discussed. en_US
dc.language.iso other en_US
dc.publisher جامعة سرت - Sirte University en_US
dc.relation.ispartofseries المجلد الثامن - العدد الاول - يونيو 2018;113-120
dc.subject Finite Element Method en_US
dc.subject Beam Resonant en_US
dc.subject Pressure en_US
dc.title Finite Element Modeling and Simulation of A Microstructure Silicon Beam Resonant en_US
dc.type Article en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Browse

My Account